Recent Progress in Non-Contact Electrical Characterization for SiC and Related Compounds

An increasing interest in the non-contact corona charge-based electrical characterization technique, CnCV, for wide bandgap semiconductors, is justified by reduction of cost and testing feedback time [1]. In addition, technique expands measurement capabilities. Regarding SiC, recent progress includes expanded dopant concentration range on fresh epitaxial wafers. The latter made possible with an ultraviolet wafer pretreatment [2]. novel applications to AlGaN/GaN HEMT insulating substrates demonstrate benefits a noninvasive top side edge contact, TSEC [3], that eliminates problem floating surface potential. This development enables unique three variable, charge-voltage-capacitance (Q-V-C), sapphire SI-SiC. quasistatic CnCV measurement, not affected series resistance, shown be suitable mapping parameters. version can combined eddy current enabling 2DEG mobility measurements vs. electron sheet density.